Method for forming a semiconductor component with a cooling structure

ABSTRACT

An apparatus includes a semiconductor component and a cooling structure. The cooling structure is over a back side of the semiconductor component. The cooling structure includes a housing, a liquid delivery device and a gas exhaust device. The housing includes a cooling space adjacent to the semiconductor component. The liquid delivery device is connected to an inlet of the housing and is configured to deliver a liquid coolant into the cooling space from the inlet. The gas exhaust device is connected to an outlet of the housing and is configured to lower a pressure in the housing.

CROSS REFERENCE TO RELATED APPLICATION

This application is a divisional application of U.S. Application SerialNo. 16/869,594, filed on May 8, 2020, which claims the priority benefitof U.S. Provisional Applications Serial No. 62/906,711, filed on Sep.26, 2019. The entirety of the above-mentioned patent application ishereby incorporated by reference herein and made a part of thisspecification.

BACKGROUND

The semiconductor industry has experienced rapid growth due tocontinuous improvements in the integration density of various electroniccomponents (e.g., transistors, diodes, resistors, capacitors, etc.). Forthe most part, this improvement in integration density has come fromrepeated reductions in minimum feature size, which allows more of thesmaller components to be integrated into a given area. However, the heatdissipation is a challenge in a variety of semiconductor components.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 schematically illustrates an apparatus in accordance with someembodiments of the present disclosure.

FIG. 2 is an enlarged view of the region X1 illustrated in FIG. 1 inaccordance with some embodiments of the present disclosure.

FIG. 3 schematically illustrates a partial enlarged view of a liquiddelivery device of the apparatus in accordance with some otherembodiments of the present disclosure.

FIGS. 4 through 7 schematically illustrates various apparatuses inaccordance with some other embodiments of the present disclosure.

FIG. 8 is a flow chart of a method for operating an apparatus inaccordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature’s relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Embodiments will be described with respect to a specific context,namely, an apparatus including a cooling structure and a method foroperating the apparatus. Embodiments discussed herein are to provideexamples to enable making or using the subject matter of thisdisclosure, and a person having ordinary skill in the art will readilyunderstand modifications that can be made while remaining withincontemplated scopes of different embodiments. Like reference numbers andcharacters in the figures below refer to like components. Althoughmethod embodiments may be discussed as being performed in a particularorder, other method embodiments may be performed in any logical order.

FIG. 1 schematically illustrates an apparatus in accordance with someembodiments of the present disclosure. Referring to FIG. 1 , theapparatus 10 in accordance with some embodiments of the presentdisclosure may include a semiconductor component 100 and a coolingstructure 200 over a back side BS of the semiconductor component 100. Insome embodiments, the semiconductor component 100 may be or may includeany type of semiconductor devices, such as a semiconductor chip or asemiconductor package. For example, the semiconductor component 100 mayinclude a semiconductor chip 110, which may be singulated from a devicewafer (not shown). The semiconductor chip 110 may be or may include alogic die, such as a central processing unit (CPU) die, a graphicprocessing unit (GPU) die, a micro control unit (MCU) die, aninput-output (I/O) die, a memory die, a baseband (BB) die, anapplication processor (AP) die, or the like. In some embodiments, thesemiconductor chip 110 may include a semiconductor substrate (notindividually illustrated) and a plurality of devices (not individuallyillustrated) formed in or on the semiconductor substrate. In someembodiments, the semiconductor substrate is made of silicon or othersemiconductor materials. In some alternative embodiments, thesemiconductor substrate includes other suitable elemental semiconductor,such as diamond or germanium; a suitable compound semiconductor, such asgallium arsenide, silicon carbide, indium arsenide, or indium phosphide;or a suitable alloy semiconductor, such as silicon germanium carbide,gallium arsenic phosphide, or gallium indium phosphide. In someembodiments, the devices may be integrated circuit (IC) devices. Theintegrated circuit (IC) devices may be or may include active devices(e.g., transistors or the like) and, optionally, passive devices (e.g.,resistors, capacitors, inductors, or the like) to generate the desiredfunctional requirements for the semiconductor chip 110. Besides, thesemiconductor chip 110 may further include an interconnect structure(not individually illustrated) disposed on the semiconductor substrate.The interconnect structure may be electrically connected to variousdevices to form functional circuits within the semiconductor chip 110.

In some embodiments, the semiconductor component 100 further includes asubstrate 120, and the semiconductor chip 110 is mounted onto andelectrically connected to the substrate 120 through a plurality ofconductive bumps B1, so as to form a semiconductor package. In someembodiments, the substrate 120 may include an interposer, a packagesubstrate and/or the like. In some embodiments, the conductive bumps B1may be controlled collapse chip connection (C4) bumps, micro-bumps,solder balls, ball grid array (BGA) balls, or other suitable conductiveterminals. Besides, in some embodiments, an underfill UF may be formedbetween the semiconductor chip 110 and the substrate 120 so as tolaterally encapsulate the conductive bumps B1. The underfill UF mayprotect the conductive bumps B1 from fatigue and may enhance bondingreliability between the semiconductor chip 110 and the substrate 120. Insome alternative embodiments, the formation of the underfill UF may beomitted. Furthermore, the substrate 120 may include a plurality ofconductive bumps B2 for external connections to the semiconductorcomponent 100. Other possible forms and shapes of the conductive bumpsB1 and B2 may be utilized according to design requirements.

Still referring to FIG. 1 , the cooling structure 200 includes a housing210, a liquid delivery device 220 and a gas exhaust device 230. In someembodiments, the housing 210 includes a cooling space SP adjacent to thesemiconductor component 100. In some embodiments, the liquid deliverydevice 220 is connected to an inlet 210 a of the housing 210, and thegas exhaust device 230 is connected to an outlet 210 b of the housing210. In some embodiments, the housing 210 includes a top portion 210Tand a sidewall portion 210S connected to the top portion 210T. In someembodiments, the top portion 210T of the housing 210 includes the inlet210 a of the housing 210. In some embodiments, the sidewall portion 210Sof the housing 210 includes the outlet 210 b of the housing 210.

In some embodiments, the housing 210 of the cooling structure 200 abutson the back side BS of the semiconductor component 100 to form thecooling space SP between the housing 210 and the semiconductor component100. In other words, the cooling space SP is defined by the housing 210and the back side BS of the semiconductor component 100, wherein theliquid coolant LC in the cooling space SP is in contact with the backside BS of the semiconductor component 100. Here, the back side BS ofthe semiconductor component 100 is referred to as the back side BS ofthe semiconductor chip 110. To facilitate the assembling of the coolingstructure 200, a plurality of elastic elements EE may be utilized. Forexample, the elastic elements EE are installed between the sidewallportion 210S of the housing 210 and the semiconductor component 100 toseal the gap between the sidewall portion 210S of the housing 210 andthe semiconductor component 100 so as to prevent the liquid coolant LCfrom leaking. In some embodiments, the elastic elements EE may beO-rings sandwiched between the sidewall portion 210S of the housing 210and the back side BS of the semiconductor component 100. In someembodiments, the material of the elastic elements EE may be rubber orother suitable elastic material.

In some embodiments, the liquid delivery device 220 is configured todeliver a liquid coolant LC into the cooling space SP from the inlet 210a. In some embodiments, the liquid coolant LC includes water (H₂O).However, other possible kinds of the liquid coolant LC may be utilized.In some embodiments, the liquid delivery device 220 may include adelivery pipe 222, a liquid controller 224, a plurality of valves 226and a filter 228. In some embodiments, the cooling structure 200 furtherincludes a liquid supplying device 240 to supply the liquid coolant LC,and the delivery pipe 222 may be physically connected between the liquidsupplying device 240 and the inlet 210 a of the housing 210 such thatthe liquid coolant LC may be delivered from the liquid supplying device240 to the cooling space SP of the housing 210 through the delivery pipe222. In some embodiments, the liquid supplying device 240 may providefresh liquid coolant LC to the cooling space SP. In some alternativeembodiments, the liquid supplying device 240 may deliver recycled liquidcoolant LC to the cooling space SP, and the detail explanations will bediscussed later. In some embodiments, the liquid controller 224 and theplurality of valves 226 may be disposed on a flow path of the deliverypipe 222 to control a flowrate of the liquid coolant LC delivered by theliquid delivery device 220. For example, the liquid controller 224 maybe a mass flow controller (MFC) used to measure and control the flowratethe liquid coolant LC. The valves 226 may be needle valves, or any typeof on-off valve that may be opened or closed to allow liquid to passthrough or block liquid from passing through. In some embodiments, thefilter 228 is disposed on a flow path of the delivery pipe 222 to filterout impurities (such as particles, dust, etc.) from the liquid coolantLC. In some embodiments, the filter 228 is disposed between the liquidsupplying device 240 and the liquid controller 224.

In some embodiments, the gas exhaust device 230 is configured to lower apressure in the housing 210. In some embodiments, the pressure in thehousing 210 is kept lower than 760 torr (1 atm). In some embodiments,the gas exhaust device 230 may include a pump 232, a pumping port 234and a gate 236. In some embodiments, the pump 232 is in controllablecommunication with the cooling space SP of the housing 210. In someembodiments, the pump 232 is capable of evacuating gas from the coolingspace SP through the pumping port 234 connected between the outlet 210 bof the housing 210 and the pump 232, so as to maintain specific pressureinside the cooling space SP of the housing 210. In some embodiments, thepump 232 may have a power range from about 50 W to about 8500 W. In someembodiments, the flowrate of the pump 232 may range from about 20000standard cubic centimeters per minute (sccm) to about 90000000 standardcubic centimeters per minute (sccm). In some embodiments, the volume ofthe cooling space SP may range from about 10 cm³ to about 10000 cm³. Insome embodiments, the gate 236 is connected between the outlet 210 b ofthe housing 210 and the pumping port 234 to allow gas to pass through orblock gas from passing through and/or control a flowrate of the gaspumped out by the pump 232 of the gas exhaust device 230.

Specifically, when the apparatus 10 is operated, the temperature of thesemiconductor component 100 may be raised, and the liquid coolant LC inthe cooling space SP may be heated by the semiconductor component 100.On the other hand, the gas exhaust device 230 evacuates gas from thecooling space SP to lower the pressure in the housing 210, such that aboiling temperature of the liquid coolant LC in the cooling space SP maybe decreased, and the liquid coolant LC in the housing 210 may be easierto vaporize (e.g., evaporate or boil). In an embodiment where the liquidcoolant LC is water (H₂O), when the pressure is lowered from about 760torr to about 85 torr, the boiling temperature of the liquid coolant LC(water) may be decreased from about 100 C ° to about 50 C °. About 2388J of heat is required to change 1 gram of water at 50 C ° to 1 gram ofsteam at 50 C °.

Since vaporization of liquid requires much heat from its surrounding,the heat generated from the semiconductor component 100 may beeffectively adsorbed when the liquid coolant LC changes into gas phase(i.e., a gas coolant GS), thereby enhancing the heat dissipationefficiency of the apparatus 10.

In some embodiments, the cooling structure 200 may further includes anexhaust gas treatment device 280, and the gas exhaust device 230 mayfurther include an exhaust pipe 238 connected between the pump 232 andthe exhaust gas treatment device 280, such that the gas coolant GS maybe delivered from the pump 232 to the exhaust gas treatment device 280through the exhaust pipe 238. In some embodiments, the exhaust gastreatment device 280 may include a condensation device (not shown) tocondense the gas coolant GS into the liquid coolant LC for reuse, andthe recycled liquid coolant LC may be delivered to the liquid supplyingdevice 240 through a recycled liquid delivery device 290. In someembodiments, the recycled liquid delivery device 290 may include adelivery pipe 292 and a filter 294. The delivery pipe 292 may bephysically connected between the exhaust gas treatment device 280 andthe liquid supplying device 240. The filter 294 may be disposed on aflow path of the delivery pipe 292 to filter out impurities (such asparticles, dust, etc.) from the recycled liquid coolant LC. However, insome alternative embodiments, the gas coolant GS pumped out by the pump232 may be discharged by an exhaust pipe 282 of the exhaust gastreatment device 280. In some embodiments, the discharged exhaust gasmay be used for heat recycle or may be delivered to an exhaust gasscrubber.

FIG. 2 is an enlarged view of the region X1 illustrated in FIG. 1 inaccordance with some embodiments of the present disclosure. Referring toFIG. 1 and FIG. 2 , the delivery pipe 222 of the liquid delivery device220 is connected between the liquid supplying device 240 and the housing210 and extends into the cooling space SP from the top portion 210T ofthe housing 210. In some embodiments, the delivery pipe 222 of theliquid delivery device 220 includes a delivery outlet 220 a immersed inthe liquid coolant LC. In other words, there may be enough liquidcoolant LC in the cooling space SP such that the liquid surface S1 ofthe liquid coolant LC is higher than an end portion of the delivery pipe222 where the delivery outlet 220 a is located. In details, when theliquid coolant LC is heated by the semiconductor component 100, thegaseous coolant GC may be generated on the heated surface (i.e., theback side of the semiconductor component 100) so as to form bubbles BB,and the bubbles BB may accumulate at a bottom of the liquid coolant LC.The accumulation of the bubbles BB of the gaseous coolant GC may hinderthe liquid coolant LC from cooling the semiconductor component 100. Onthe other hand, the delivery of the liquid coolant LC may provide aforce to push the bubbles BB of the gaseous coolant GC, so as to removethe bubbles BB of the gaseous coolant GC from the bottom of the liquidcoolant LC when the delivery outlet 220 a delivers the liquid coolantLC. Therefore, the heat dissipation performance may not be affected bythe bubbles BB of the gaseous coolant GC.

As illustrated in FIG. 2 , in some embodiments, the delivery outlet 220a of the liquid delivery device 220 includes a plurality of deliveryholes DH, and the delivery holes DH may deliver the liquid coolant LCalong multiple injection paths IP. In some embodiments, the end portionof the delivery pipe 222 has a curved surface S2 facing thesemiconductor component 100, wherein the curved surface S2 of the endportion of the delivery pipe 222 includes the delivery holes DH. In someembodiments, the liquid coolant LC is sprayed into the housing 210, soas to provide the force to remove the bubbles BB of the gaseous coolantGC. However, other form or shape of the delivery outlet may be adaptedas long as the delivery outlet is able to provide enough force to removethe bubbles BB of the gaseous coolant GC from the bottom of the liquidcoolant LC. For example, FIG. 3 schematically illustrates a partialenlarged view of a liquid delivery device of the apparatus in accordancewith some other embodiments of the present disclosure. As shown in FIG.3 , the liquid delivery device 220 may further includes a head 229connected to the delivery pipe 222. The head 229 may include a deliveryoutlet 220 b immersed in the liquid coolant LC. The delivery outlet 220b of the liquid delivery device 220 may have an elongated opening EO todeliver the liquid coolant LC. In this case, the delivery pipe 222 andthe head 229 may be disposed in proximity to the sidewall portion 210Sof the housing 210, and the delivery outlet 220 b of the liquid deliverydevice 220 may deliver the liquid coolant LC along the same injectionpaths IP from a lateral side of the cooling space SP toward anotherlateral side of the cooling space SP, so as to remove the bubbles BB ofthe gaseous coolant GC from the bottom of the liquid coolant LC.

Referring to FIG. 1 again, in some embodiments, the apparatus 10 furtherinclude a controller 250 and a sensing device 260. In some embodiments,the controller 250 is communicatively coupled to the sensing device 260.In some embodiments, the sensing device 260 is configured to detect thetemperature of the semiconductor component 100, and the controller 250receives the feedback of the sensing device 260 to modulate the flowrateof the liquid coolant LC delivered by the liquid delivery device 220 andthe flowrate of the gaseous coolant GC pumped out by the gas exhaustdevice 230 according to the detected temperature of the semiconductorcomponent 100. For example, the controller 250 may be communicativelycoupled to the liquid controller 224 and/or the valves 226 of the liquiddelivery device 220 to modulate the flowrate of the liquid coolant LCdelivered by the liquid delivery device 220, and the controller 250 maybe communicatively coupled to the pump 232 and/or the gate 236 of thegas exhaust device 230 to modulate the flowrate of the gaseous coolantGC pumped out by the gas exhaust device 230. By the modulation of thecontroller 250, the cooling space SP of the housing 210 may bemaintained at a suitable pressure, and the semiconductor component 100may be maintained at a suitable operation temperature.

In some embodiments, the flowrate of the liquid coolant LC delivered bythe liquid delivery device 220 may range from about 2.3 cubiccentimeters per minute to about 2.7 cubic centimeters per minute. Insome embodiments, the flowrate of the gaseous coolant GC pumped out bythe gas exhaust device 230 may range from about 20000 standard cubiccentimeters per minute (sccm) to about 90000000 standard cubiccentimeters per minute (sccm).

It should be noted that the semiconductor component 100 in FIG. 1 isillustrated as an example. In other embodiments, the cooling structure200 is utilized for other types of semiconductor components, and someexemplary embodiments will be discussed in the following FIG. 4 throughFIG. 7 .

FIG. 4 through FIG. 7 schematically illustrates various apparatuses inaccordance with some other embodiments of the present disclosure.

Referring to FIG. 4 , the apparatus 10A is similar to the apparatus 10illustrated in FIG. 1 , so the detailed descriptions are not repeatedfor the sake of brevity. The difference therebetween is the types of thesemiconductor components. The semiconductor component 100A in FIG. 4 mayinclude a semiconductor wafer 110A and a plurality of semiconductorchips 120A-1, 120A-2 and 120A-3 electrically connected to thesemiconductor wafer 110A. In some embodiments, the semiconductorcomponent 100A is referred to as a system-on-wafer (SoW) package. Insome embodiments, the semiconductor wafer 110A is at wafer level, whichmeans that the semiconductor wafer 110A is not sawed into individualchips or packages. In some embodiments, the semiconductor chips 120A-1,120A-2 and 120A-3 are similar to the semiconductor chip 110 in FIG. 1 ,so the detailed descriptions are omitted herein. In some embodiments,the semiconductor chips 120A-1, 120A-2 and 120A-3 have the same functionor different functions. In some embodiments, the sizes (referred to theheight and/or the width) of the semiconductor chips 120A-1, 120A-2 and120A-3 may be the same or different. Here, the back side BS of thesemiconductor component 100A is referred to as the back side BS of thesemiconductor wafer 110A.

In some embodiments, the semiconductor chip 120A-1 and the semiconductorwafer 110A are bonded together by a hybrid bonding to form a hybridbonding structure HB. The hybrid bonding may involve two types ofbonding, including metal-to-metal bonding and dielectric-to-dielectricbonding. In some embodiments, the hybrid bonding structure HB includes afirst bonding metal layer of the semiconductor wafer 110A and a secondbonding metal layer of the semiconductor chip 120A-1 bonded bymetal-to-metal bonding, as well as a first bonding dielectric layer ofthe semiconductor wafer 110A and a second bonding dielectric layer ofthe semiconductor chip 120A-1 bonded by dielectric-to-dielectricbonding. In some embodiments, the semiconductor chips 120A-2 and 120A-3are electrically connected to the semiconductor wafer 110A through theplurality of conductive bumps B1. In some embodiments, the conductivebumps B1 may be controlled collapse chip connection (C4) bumps,micro-bumps, solder balls, ball grid array (BGA) balls, or othersuitable conductive terminals. Besides, in some embodiments, anunderfill UF may be formed between the semiconductor wafer 110A and thesemiconductor chips 120A-2 and 120A-3 so as to laterally encapsulate theconductive bumps B1. In some alternative embodiments, the formation ofthe underfill UF may be omitted.

Referring to FIG. 5 , the apparatus 10B is similar to the apparatus 10illustrated in FIG. 1 , so the detailed descriptions are not repeatedfor the sake of brevity. The difference therebetween is the types of thesemiconductor components. The semiconductor component 100B in FIG. 5 mayinclude a plurality of semiconductor chip 110B-1, 110B-2 and 110B-3mounted onto and electrically connected to the substrate 120. Besides,the cooling structure 200 further includes a heat spreader 270 disposedbetween the housing 210 and the semiconductor component 100B. In someembodiments, the semiconductor chips 110B-1, 110B-2 and 110B-3 aresimilar to the semiconductor chip 110 in FIG. 1 , so the detaileddescriptions are omitted herein. In some embodiments, the semiconductorchips 110B-1, 110B-2 and 110B-3 have the same function or differentfunctions. In some embodiments, the sizes (referred to the height and/orthe width) of the semiconductor chips 110B-1, 110B-2 and 110B-3 may bethe same or different. Here, the back side BS of the semiconductorcomponent 100B is referred to as the back sides BS of the semiconductorchips 110B-1, 110B-2 and 110B-3.

In some embodiments, the housing 210 of the cooling structure 200 abutson the heat spreader 270 to form the cooling space SP between thehousing 210 and the heat spreader 270. In other words, the cooling spaceSP is defined by the housing 210 and a top surface 270 a of the heatspreader 270, wherein the liquid coolant LC in the cooling space SP isin contact with the top surface 270 a of the heat spreader 270. In someembodiments, the material of the heat spreader 270 includes copper orother suitable metallic materials. In some embodiments, the heatspreader 270 is attached to the back side BS of the semiconductorcomponent 100B through a thermal interface material TIM. In someembodiments, the heat spreader 270 includes a top portion 270T and asidewall portion 270S connected to the top portion 270T. In someembodiments, the sidewall portion 210S of the housing 210 abuts on thetop portion 270T of the heat spreader 270, and the sidewall portion 270Sof the heat spreader 270 abuts on the substrate 120. In someembodiments, the top portion 270T of the heat spreader 270 includes afirst segment 272T and a second segment 274T having differentthicknesses. In detail, the heights of the semiconductor chips 110B-1and 110B-2 may be greater than the height of the semiconductor chip110B-3. In other words, the back sides BS of the semiconductor chips110B-1 and 110B-2 may be higher than the back side BS of thesemiconductor chip 110B-3, such that the first segment of the topportion 270T of the heat spreader 270 directly over the semiconductorchips 110B-1 and 110B-2 may be designed to have a first thickness T1,and the second segment of the top portion 270T of the heat spreader 270directly over the semiconductor chip 110B-3 may be designed to have asecond thickness T2 greater than the first thickness T1. However, insome alternative embodiments, the back side of the semiconductorcomponent may be coplanar and the top portion of the heat spreader mayhave the same thickness.

Referring to FIG. 6 , the apparatus 10C is similar to the apparatus 10Billustrated in FIG. 5 , so the detailed descriptions are not repeatedfor the sake of brevity. The difference therebetween is the types of thesemiconductor components. The semiconductor component 100C in FIG. 6 mayinclude a first package PK1, a second package PK2, and a circuit carrier130. In some embodiments, the first package PK1 includes a plurality ofsemiconductor chips 110C-1, a substrate 120C-1 and an insulatingencapsulant E1, wherein the semiconductor chips 110C-1 are mounted ontoand electrically connected to the substrate 120C-1 through the pluralityof conductive bumps B1, and the insulating encapsulant E1 is formed onthe substrate 120C-1 to laterally encapsulate the semiconductor chips110C-1. In some embodiments, the second package PK2 includes a pluralityof semiconductor chips 110C-2, a substrate 120C-2 and an insulatingencapsulant E2, wherein the semiconductor chips 110C-2 are mounted ontoand electrically connected to the substrate 120C-2 through the pluralityof conductive bumps B1, and the insulating encapsulant E2 is formed onthe substrate 120C-2 to laterally encapsulate the semiconductor chips110C-2. In some embodiments, the first package PK1 and the secondpackage PK2 are mounted onto and electrically connected to the circuitcarrier 130 through the plurality of conductive bumps B2. In someembodiments, the circuit carrier 130 may include a printed circuit board(PCB), a mother board, and/or the like. In some embodiments, thesemiconductor chips 110C-1 and 110C-2 are similar to the semiconductorchip 110 in FIG. 1 , and the substrate 120C-1 and 120C-2 are similar tothe substrate 120 in FIG. 1 , so the detailed descriptions are omittedherein. In some embodiments, the first package PK1 and the secondpackage PK2 have the same function or different functions. In someembodiments, the sizes (referred to the height and/or the width) of thefirst package PK1 and the second package PK2 may be the same ordifferent. Here, the back side BS of the semiconductor component 100C isreferred to as the back sides BS of the first package PK1 and the secondpackage PK2.

In some embodiments, the sidewall portion 270S of the heat spreader 270abuts on the circuit carrier 130. In some embodiments, the top portion270T of the heat spreader 270 includes a first segment 272T and a secondsegment 274T having different thicknesses. In detail, the height of thefirst package PK1 may be greater than the height of the second packagePK2. In other words,, the back side BS of the first package PK1 may behigher than the back side BS of the second package PK2, such that thefirst segment 272T of the top portion 270T of the heat spreader 270directly over the first package PK1 may be designed to have a firstthickness T1, and the second segment 274T of the top portion 270T of theheat spreader 270 directly over the second package PK2 may be designedto have a second thickness T2 greater than the first thickness T1.However, in some alternative embodiments, the back side of thesemiconductor component may be coplanar and the top portion of the heatspreader may have the same thickness.

Referring to FIG. 7 , the apparatus 10D is similar to the apparatus 10Billustrated in FIG. 5 , so the detailed descriptions are not repeatedfor the sake of brevity. The difference therebetween is the types of thesemiconductor components. The semiconductor component 100D in FIG. 7 mayinclude a plurality of semiconductor chips 110D-1, 110D-2 and 110D-3 anda semiconductor wafer 120D electrically connected to the semiconductorchips 110D-1, 110D-2 and 110D-3. In some embodiments, the semiconductorcomponent 100D is similar to the semiconductor component 100A in FIG. 4, and the detailed description is thus omitted herein. Here, the backside BS of the semiconductor component 100D is referred to as the backsides BS of the semiconductor chips 110D-1, 110D-2 and 110D-3.

In some embodiments, the sidewall portion 270S of the heat spreader 270abuts on the semiconductor wafer 120D. In some embodiments, the topportion 270T of the heat spreader 270 includes a first segment 272T anda second segment 274T having different thicknesses. In detail, theheights of the semiconductor chips 110D-2 and 110D-3 may be greater thanthe height of the semiconductor chip 110D-1. In other words, the backsides BS of the semiconductor chips 110D-2 and 110D-3 may be higher thanthe back side BS of the semiconductor chip 110D-1, such that the firstsegment 272T of the top portion 270T of the heat spreader 270 directlyover the semiconductor chips 110D-2 and 110D-3 may be designed to have afirst thickness T1, and the second segment 274T of the top portion 270Tof the heat spreader 270 directly over the semiconductor chip 110D-1 maybe designed to have a second thickness T2 less than the first thicknessT1. However, in some alternative embodiments, the back side of thesemiconductor component may be coplanar and the top portion of the heatspreader may have the same thickness.

FIG. 8 is a flow chart of a method 20 for operating an apparatus inaccordance with some embodiments. Although the method 20 is illustratedand/or described as a series of acts or events, it will be appreciatedthat the method is not limited to the illustrated ordering or acts.Thus, in some embodiments, the acts may be carried out in differentorders than illustrated, and/or may be carried out concurrently.Further, in some embodiments, the illustrated acts or events may besubdivided into multiple acts or events, which may be carried out atseparate times or concurrently with other acts or sub-acts. In someembodiments, some illustrated acts or events may be omitted, and otherun-illustrated acts or events may be included.

At act A21, a cooling structure is provided over a semiconductorcomponent. FIG. 1 and FIG. 4 to FIG. 7 illustrate the cooling structure200 and various exemplary semiconductor components 10, 10A, 10B, 10C and10D. In some embodiments, the cooling structure 200 includes the housing210 including the cooling space SP adjacent to the semiconductorcomponent (e.g., the semiconductor component 100, 100A, 100B, 100C or100D), the liquid delivery device 220 connected to the inlet 210 a ofthe housing 210, and the gas exhaust device 230 connected to the outlet210 b of the housing 210. In some embodiments, the liquid deliverydevice 220 is configured to deliver the liquid coolant LC into thecooling space SP from the inlet 210 a, and the gas exhaust device 230 isconfigured to lower the pressure in the housing 210. In someembodiments, the heat spreader 270 is provided between the housing 210and the semiconductor component (e.g., the semiconductor component 100B,100C or 100D).

At act A22, a liquid coolant is delivered into a cooling space of ahouse of the cooling structure. FIG. 1 and FIG. 4 to FIG. 7 illustratethat the liquid coolant LC is delivered into the cooling space SP of thehouse 210 of the cooling structure 200 by the liquid delivery device220.

At act A23, a pressure in the housing is lowered to decrease a boilingtemperature of the liquid coolant in the cooling space. FIG. 1 and FIG.4 to FIG. 7 illustrate that the gas in cooling space SP is evacuated bythe gas exhaust device 230 so as to lower the pressure in the housing210.

At act A24, a temperature of the semiconductor component is detected.FIG. 1 and FIG. 4 illustrate the sensing device 260 configured to detectthe temperature of the semiconductor component (e.g., the semiconductorcomponent 100, 100A). Although FIG. 5 to FIG. 7 do not illustrate thesensing device 260, the apparatuses 10B, 10C and/or 10C may also includethe sensing device 260 to detect the temperature of the semiconductorcomponent (e.g., the semiconductor component 100B, 100C or 100D).

At act A25, a flowrate of the liquid coolant delivered by the liquiddelivery device and a flowrate of a gaseous coolant pumped out by thegas exhaust device are modulated according to the detected temperatureof the semiconductor component. FIG. 1 and FIG. 4 to FIG. 7 illustratethe controller 250 communicatively coupled to the sensing device 260,the liquid delivery device 220 and the gas exhaust device 230. In someembodiments, the controller 250 is configured to modulate the flowrateof the liquid coolant LC delivered by the liquid delivery device 220 andthe flowrate of the gaseous coolant GC pumped out by the gas exhaustdevice 230 according to the detected temperature of the semiconductorcomponent (e.g., the semiconductor component 100, 100A, 100B, 100C or100D) to keep the pressure in the housing 210 lower than 760 torr.

In some embodiments, the sequence of acts A22, A23, A24 and A25 may beexchanged as needed. In some embodiments, some of acts A22, A23, A24 andA25 may be performed at the same time. For example, when the apparatus(e.g., the apparatus 10, 10A, 10B, 10C or 10D) is operated at thebeginning, act A22 is performed to deliver the liquid coolant LC intothe cooling space SP. Then, act A23 is performed to lower the pressurein the cooling space SP, such that the boiling temperature of the liquidcoolant LC is lowered. Subsequently, the gas gaseous coolant GC isvaporized from the liquid coolant LC when the liquid coolant LC isheated by the semiconductor component (e.g., the semiconductor component100, 100A, 100B, 100C or 100D), such that the pressure in the housing210 increases. Thereafter, act A22 and/or act A23 may be performed againto newly add the liquid coolant LC into the cooling space SP and/orevacuate the gas gaseous coolant GC from the cooling space SP tomaintain the specific pressure inside the cooling space SP of thehousing 210. Besides, act A23 and/ or A24 may be performed before and/orafter act A21 and/ or A22.

In accordance with some embodiments of the disclosure, an apparatusincludes a semiconductor component and a cooling structure. The coolingstructure is over a back side of the semiconductor component. Thecooling structure includes a housing, a liquid delivery device and a gasexhaust device. The housing includes a cooling space adjacent to thesemiconductor component. The liquid delivery device is connected to aninlet of the housing and is configured to deliver a liquid coolant intothe cooling space from the inlet. The gas exhaust device is connected toan outlet of the housing and is configured to lower a pressure in thehousing.

In accordance with some embodiments of the disclosure, a method includesthe following steps. A cooling structure is provided over asemiconductor component, wherein the cooling structure including ahousing including a cooling space adjacent to the semiconductorcomponent, a liquid delivery device connected to an inlet of thehousing, and a gas exhaust device connected to an outlet of the housing.A liquid coolant is delivered into the cooling space from the inlet bythe liquid delivery device. A pressure in the housing is lowered by thegas exhaust device to decrease a boiling temperature of the liquidcoolant in the cooling space.

In accordance with some embodiments of the disclosure, a method includesthe following steps. A cooling structure is provided over asemiconductor component, wherein the cooling structure including ahousing including a cooling space adjacent to the semiconductorcomponent, a liquid delivery device connected to an inlet of the housingand configured to deliver a liquid coolant into the cooling space fromthe inlet, and a gas exhaust device connected to an outlet of thehousing and configured to lower a pressure in the housing. According toa detected temperature of the semiconductor component, a flowrate of theliquid coolant delivered by the liquid delivery device and a flowrate ofa gaseous coolant pumped out by the gas exhaust device are modulated tokeep the pressure in the housing lower than 760 torr, wherein thegaseous coolant is vaporized from the liquid coolant when the liquidcoolant is heated by the semiconductor component.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method, comprising: providing a cooling structure over a semiconductor component, the cooling structure comprising a housing comprising a cooling space adjacent to the semiconductor component, a liquid delivery device connected to an inlet of the housing, and a gas exhaust device connected to an outlet of the housing; delivering a liquid coolant into the cooling space from the inlet by the liquid delivery device; and lowering a pressure in the housing by the gas exhaust device to decrease a boiling temperature of the liquid coolant in the cooling space.
 2. The method as claimed in claim 1, wherein lowering the pressure in the housing comprises pumping out a gaseous coolant vaporized from the liquid coolant when the liquid coolant is heated by the semiconductor component.
 3. The method as claimed in claim 1, wherein the housing of the cooling structure abuts on a back side of the semiconductor component to form the cooling space between the housing and the semiconductor component.
 4. The method as claimed in claim 1, further comprising: providing a heat spreader between the housing and the semiconductor component, wherein the housing of the cooling structure abuts on the heat spreader to form the cooling space between the housing and the heat spreader.
 5. The method as claimed in claim 4, wherein the heat spreader is attached to a back side of the semiconductor component through a thermal interface material.
 6. The method as claimed in claim 1, wherein the liquid delivery device extends into the cooling space from a top portion of the housing and includes a delivery outlet immersed in the liquid coolant, so that bubbles of the gaseous coolant are removed from a bottom of the liquid coolant when the delivery outlet delivers the liquid coolant.
 7. A method, comprising: providing a cooling structure over a back side of a semiconductor component, wherein a cooling space is defined by the cooling structure and the back side of the semiconductor component; delivering a liquid coolant into the cooling space; and decreasing a boiling temperature of the liquid coolant delivered onto the back side of the semiconductor component by lowering a pressure in the cooling space.
 8. The method as claimed in claim 7, wherein the cooling structure comprises a housing abutting on the back side of the semiconductor component.
 9. The method as claimed in claim 7, wherein the liquid coolant is in contact with the back side of the semiconductor component after delivering the liquid coolant into the cooling space.
 10. The method as claimed in claim 7, wherein the cooling structure further comprises a liquid delivery device and a gas exhaust device, the liquid delivery device is configured to deliver the liquid coolant into the cooling space, and the gas exhaust device is configured to pump out a gaseous coolant vaporized from the liquid coolant when the liquid coolant is heated by the semiconductor component.
 11. The method as claimed in claim 10, wherein the liquid delivery device extends into the cooling space from a top portion of the cooling structure and includes a delivery outlet immersed in the liquid coolant.
 12. The method as claimed in claim 7, further comprising: condensing the gaseous coolant into a recycled liquid coolant for reuse.
 13. The method as claimed in claim 12, wherein the gaseous coolant is condensed into the recycled liquid coolant for reuse by an exhaust gas treatment device.
 14. The method as claimed in claim 12, wherein the recycled liquid coolant is delivered to a liquid supplying device through a recycled liquid delivery device.
 15. A method, comprising: providing a heat spreader covering a back side of the semiconductor component; providing a cooling structure over the heat spreader, wherein a cooling space is defined by the cooling structure and the heat spreader; delivering a liquid coolant into the cooling space; and decreasing a boiling temperature of the liquid coolant delivered onto the heat spreader by lowering a pressure in the cooling space.
 16. The method as claimed in claim 15, wherein the heat spreader is attached to the back side of the semiconductor component through a thermal interface material.
 17. The method as claimed in claim 15, wherein the cooling structure comprises a housing abutting on the back side of the semiconductor component, and the liquid coolant is in contact with the heat spreader after delivering the liquid coolant into the cooling space.
 18. The method as claimed in claim 15, wherein the liquid delivery device extends into the cooling space from a top portion of the cooling structure and includes a delivery outlet immersed in the liquid coolant.
 19. The method as claimed in claim 15, wherein the cooling structure further comprises a liquid delivery device and a gas exhaust device, the liquid delivery device is configured to deliver the liquid coolant into the cooling space, and the gas exhaust device is configured to pump out a gaseous coolant vaporized from the liquid coolant when the liquid coolant is heated by the semiconductor component.
 20. The method as claimed in claim 15, further comprising: condensing the gaseous coolant into a recycled liquid coolant for reuse, wherein the gaseous coolant is condensed into the recycled liquid coolant for reuse by an exhaust gas treatment device. 